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Plastic N Channel BC3400 350mW 5.8A Low Voltage Mosfet

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Plastic N Channel BC3400 350mW 5.8A Low Voltage Mosfet

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Brand Name : Huixin

Model Number : BC3400

Certification : ISO9001, ISO4001, IATF16949, UL

Place of Origin : China

MOQ : 3000pcs

Price : Negotiable

Payment Terms : T/T, Paypal, Cash

Supply Ability : 1 billion pieces/ Month

Delivery Time : 2-4Weeks

Packaging Details : 3000pcs / Reel

Type : BC3400 N Channel MOSFET

Drain-Source Voltage : 30V

Continuous Drain Current : 5.8A

MPQ : 3000PCS

Sample Time : 5-7 Days

Sample : Free

Lead Time : 2-4Weeks

Lead Free Status : RoHS

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SOT-23 Plastic-Encapsulate MOSFETS

BC3400 N-Channel Enhancement Mode Field Effect Transistor
FEATURES
High dense cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability
Maximum ratings ( Ta=25℃ unless otherwise noted)
Parameter Symbol Value Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±12 V
Continuous Drain Current ID 5.8 A
Drain Current-Pulsed (note 1) IDM 30 A
Power Dissipation PD 350 mW
Thermal Resistance from Junction to Ambient (note 2) RθJA 357 ℃/W
Junction Temperature TJ 150 ℃
Storage Temperature TSTG -55~+150 ℃
Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Units
Off Characteristics
Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =250µA 30 V
Zero gate voltage drain current IDSS VDS =24V,VGS = 0V 1 µA
Gate-source leakage current IGSS VGS =±12V, VDS = 0V ±100 nA
On characteristics
Drain-source on-resistance (note 3) RDS(on) VGS =10V, ID =5.8A 35 mΩ
VGS =4.5V, ID =5A 40 mΩ
Forward tranconductance gFS VDS =5V, ID =5A 8 S
Gate threshold voltage VGS(th) VDS =VGS, ID =250µA 0.7 1.4 V
Dynamic Characteristics (note 4,5)
Input capacitance Ciss VDS =15V,VGS =0V,f =1MHz 1050 pF
Output capacitance Coss 99 pF
Reverse transfer capacitance Crss 77 pF
Gate resistance Rg VDS =0V,VGS =0V,f =1MHz 3.6 Ω
Switching Characteristics (note 4,5)
Turn-on delay time td(on) VGS=10V,VDS=15V, RL=2.7Ω,RGEN=3Ω 5 ns
Turn-on rise time tr 7 ns
Turn-off delay time td(off) 40 ns
Turn-off fall time tf 6 ns
Drain-source diode characteristics and maximum ratings
Diode forward voltage (note 3) VSD IS=1A,VGS=0V 1 V

Note :
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t < 5 sec.
3. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.

Product Tags:

5.8A Low Voltage Mosfet

      

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BC3400 Plastic Encapsulate MOSFETS

      
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Plastic N Channel BC3400 350mW 5.8A Low Voltage Mosfet Images

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